Publications

P. Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, G. Nicotra, C. Bongiorno, F. Giannazzo, F. Roccaforte, Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors, Mater. Sci. Semicond. Proc. 78, (2018) 38-42

F. Roccaforte, M. Vivona, G. Greco, R. Lo Nigro, F. Giannazzo, S. Rascunà, M. Saggio, Metal/semiconductor contacts to Silicon Carbide: physics and technology, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 339-344.

P. Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, F. Roccaforte, Temperature-dependent gate current in SiO2/4H-SiC MOS capacitors, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 473-476.

M. Zimbone, N. Piluso, G. Litrico, R. Nipoti, R. Reitano, M.C. Canino, M.A. Di Stefano, S. Lorenti, F. La Via, Double step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 357-360.

P. Fiorenza, F. Iucolano, M. Saggio, F. Roccaforte, Oxide traps probed by transient capacitance measurements on lateral SiO2/4H-SiC MOSFETs, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 285-288.


 

 

This project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU) under grant agreement No.737483. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and Czech Republic, France, Germany, Italy.

This project also receives ESI funds from MIUR 2014-2020 FESR program.