Articles in peer review journals

Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, G. Nicotra, C. Bongiorno, F. Giannazzo, F. Roccaforte, Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors, Mater. Sci. Semicond. Proc. 78, (2018) 38-42

Roccaforte, M. Vivona, G. Greco, R. Lo Nigro, F. Giannazzo, S. Rascunà, M. Saggio, Metal/semiconductor contacts to Silicon Carbide: physics and technology, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 339-344.

Fiorenza, M. Vivona, F. Iucolano, A. Severino, S. Lorenti, F. Roccaforte, Temperature-dependent gate current in SiO2/4H-SiC MOS capacitors, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 473-476.

Zimbone, N. Piluso, G. Litrico, R. Nipoti, R. Reitano, M.C. Canino, M.A. Di Stefano, S. Lorenti, F. La Via, Double step annealing for the recovering of ion implantation defectiveness in 4H-SiC DIMOSFET, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 357-360.

Fiorenza, F. Iucolano, M. Saggio, F. Roccaforte, Oxide traps probed by transient capacitance measurements on lateral SiO2/4H-SiC MOSFETs, Proc. of the International Conference on Silicon Carbide and Related Materials (ICSCRM2017), Washington DC, USA, September 17-23, 2017, Mater. Sci. Forum 924, (2018) 285-288.

Fiorenza, F. Iucolano, G. Nicotra, C. Bongiorno, I. Deretzis, A. La Magna, F. Giannazzo, M. Saggio, C. Spinella, F. Roccaforte, Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis, Nanotechnology 29, (2018) 395702.

Fiorenza, M. Vivona, S. Di Franco, S.Sanzaro, E. Smecca, A. Alberti, M. Saggio, F. Roccaforte, Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering, Proc. of the EMRS-Fall Meeting 2018, Symposium R, Warsaw, Poland, 17-20 September 2018 – Mater. Sci. Semicond. Proc. 93, (2019) 290-294.

Rascunà, P. Badalà, C. Tringali, C. Bongiorno, E. Smecca, A. Alberti, S. Di Franco, F. Giannazzo, G. Greco, F. Roccaforte, M. Saggio, Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC, Proc. of the EMRS-Fall Meeting 2018, Symposium R, Warsaw, Poland, 17-20 September 2018- Mater. Sci. Semicond. Proc. (2019), 97, (2019) 62-66.

Publications in Conference Proceedings

 Cacciato, F. Scrimizzi, A. Palermo, F. Gennaro, D. Nardo, Power devices comparison in synchronous half bridge topology, IEEE Proc. of the 20th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe), Riga (Latvia), 17-21 September 2018, P.1-P.10.

Roccaforte, G. Greco, P. Fiorenza, Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT, IEEE Proc. of the 41st International Semiconductor Conference (CAS2018), Sinaia (Romania), October 10-12, 2018, pp. 7-16.

Domingo Salvany, P. Decroux, C. Degoutte, L. Liggio, S. Frisella, “HVDC Intelligent Power Switchs for aircraft power distribution”, Proc. of MEA 2019 : More Electric Aircraft, Toulose (France), 6-7 February 2019.

Consentino, E. Guevara, L. Sanchez, F. Crupi, S. Reggiani, G. Meneghesso, “Threshold Voltage Instability in SiC Power MOSFETs”, Proc. of the PCIM European Conference 2019: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg (Germany) 7-9 May 2019.

Imbruglia, M. Saggio, S. Cascino, A. Minotti, M. Renna, G. Gullotta, J. Favre, F. Roccaforte, P. Fiorenza, L. Liggio, S. Frisella, A.Lionetto, “WInSiC4AP: Wide band gap Innovative SiC for Advanced Power”, Proc. of the AEIT – International Conference of Electrical and Electronic Technologies for Automotive, Torino (Italy), July 2-4, 2019.


 

 

This project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU) under grant agreement No.737483. This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and Czech Republic, France, Germany, Italy.

This project also receives ESI funds from MIUR 2014-2020 FESR program.