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The First International Workshop on “Wide Band Gap Innovative SiC for Advanced Power” was held in Tours (France), on March 7th, 2019, and was attended by more than fifty academic and industrial researchers, coming from six European countries.

As coordinator of the WInSiC4AP project, DTSMNS was involved in the organization of this event, together with CNR-IMM, IUNET and University of Tours.

During the workshop the recent advances in silicon carbide (4H-SiC) device technology, processing and characterization, and reliability issues were discussed. New applications of 4H-SiC devices in the fields of automotive, railway and avionics were also be reported.

Workshop Technical Program

Opening, Jean-Francoise Michaud, University of Tours, France.

Introduction: the WInSiC4AP Project, Leoluca Liggio Distretto Tecnologico Sicilia Micro e Nano Sistemi and Antonio Imbruglia STMicroelectronics, Italy (view slides).

Session I – MOSFET processing (Chair: Fabrizio Roccaforte, CNR-IMM, Italy)

  • State of the art of 4H-SiC MOSFET processing, Philippe Godignon, CNM-CSIC, Spain (Keynote Speech) (view slides);
  • Introduction to laser annealing of ohmic contacts on 4H-SiC, Clément Berger, University of Tours, France (view slides);
  • Processing and characterization of gate oxides for 4H-SiC MOSFETs, Patrick Fiorenza,CNR-IMM, Italy;
  • Positive Bias Temperature Instabilties in SiC Power nMOSFETs, Giuseppe Consentino, Università della Calabria, Italy.

Session II – Characterization, Modeling and Packaging (Chair: Susanna Reggiani, IUNET, Italy)

  • Advanced characterization of 4H-SiC high-voltage devices, Dominique Planson, Ampere Lab, France (Keynote Speech) (view slides);
  • Heiman TCAD model for threshold instability in advanced ST power MOSFET devices, Salvatore Cascino, STMicroelectronics, Italy (view slides);
  • Absolute Double side cooling – low inductance packaging: a breakthrough for cost effective inverters, Jacques Favre, aPSI3D, France (view slides).

ECSEL JU speech, Electronic Components and Systems for European Leadership, Eric Fribourg-Blanc (view slides).  

Session III – Applications (Chair: Jean-François Michaud, University of Tours, France)

  • SiC MOSFETs dynamic robustness: challenges and opportunities for developing high-performance multi-chip modules, Alberto Castellazzi, University of Nottingham, UK (Keynote Speech) (view slides);
  • Engineering requirements for avionics of unmanned aerial system, Costantino Giaconia, University of Palermo, Italy (view slides);
  • SiC Based Power Plant and Avionics, Pietro Rosi, OMI, Italy (view slides).

Closing, Daniel Alquier, University of Tours, France.