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Do not miss to participate!
Please REGISTER NOW >>>  Registration Form

Send the compiled Registration Form to >>>  susanna.reggiani@unibo.it

The First International Workshop on “Wide Band Gap Innovative SiC for Advanced Power” will be held in Tours (France), on March 7th, 2019. The Workshop is organized in the framework of the ECSEL JU European Project WInSiC4AP and will be hosted by the Ecole d’ingénieurs Polytech of the University of Tours.

As coordinator of the WInSiC4AP project, DTSMNS is involved in the organization of this event, together with CNR-IMM, IUNET and University of Tours.

The aim of the workshop is to discuss the recent advances in silicon carbide (4H-SiC) devices technology, processing and characterizations, and reliability issues. Moreover, new applications of 4H-SiC devices in the fields of automotive, railway and avionics will be also presented.

The workshop will have the patronage of the ECSEL JU and is free of charge (including admission, coffee breaks and lunch).

Workshop Agenda

08:30    Registration

09:00    Opening, Jean-François Michaud, Local Workshop Chairman

09:10    Introduction: the WInSiC4AP Project. Leoluca Liggio and Antonio Imbruglia

Session I – MOSFET processing (Chair: Fabrizio Roccaforte, CNR-IMM, Italy)

09:30    Keynote Speech: State of the art of 4H-SiC MOSFET processing, Philippe Godignon, CNM-CSIC, Spain

10:10    Introduction to laser annealing of ohmic contacts on 4H-SiC, Clément Berger, University of Tours, France

10:30    Processing and characterization of gate oxides for 4H-SiC MOSFETs, Patrick Fiorenza,CNR-IMM, Italy

10:50    Positive Bias Temperature Instabilties in SiC Power nMOSFETs, Giuseppe Cosentino, Università della Calabria, Italy

11:10    Coffee Break

Session II – Characterization, Modeling and Packaging (Chair: Susanna Reggiani, IUNET, Italy)

11:40    Keynote Speech: Advanced characterization of 4H-SiC high-voltage devices, Dominique Planson, Ampere Lab, France

12:20    Heiman TCAD model for threshold instability in advanced ST power MOSFET devices, Salvatore Cascino, STMicroelectronics, Italy

12:40    Absolute Double side cooling – low inductance packaging: a breakthrough for cost effective inverters, Jacques Favre, aPSI3D, France.

13:00    Lunch

14:30    ECSEL JU speech

Session III – Applications (Chair: Jean-François Michaud, University of Tours, France)

14:50    Keynote Speech: SiC MOSFETs dynamic robustness: challenges and opportunities for developing high-performance multi-chip modules, Alberto Castellazzi, University of Nottingham, UK

15:30    High Voltage Intelligent Power Switches for embedded applications, Josep Domingo Salvany, NEXTER, France

15:50    Engineering requirements for avionics of unmanned aerial system, Costantino Giaconia, University of Palermo, Italy

16:10    SiC Based Power Plant and Avionics, Pietro Rosi, OMI, Italy

16:30    End of workshop/Closing remarks

Download the >>>Agenda and other logistic info.

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